THE INFLUENCE OF SURFACE RECOMBINATION VELOCITY ON THE EXCLU-SION OF MINORITY CHARGE CARRIERS IN CDXHG1-XTE MONOCRYSTALS

Abstract This study experimentally investigates the effect of surface recombination velocity on the parameters of photoconductors based on CdxHg1-xTe with 0.18≤X≤0.30 under conditions of carrier extraction due to a longitudinal electric field. The analysis of the obtained experimental results established that for samples with a ground surface, the specific detectivity Dλmax is almost independent of U_bias, whereas for samples with a polished surface, Dλmax decreases with increasing U_bias. It was determined that the surface recombination velocity significantly affects the exclusion effect and its mechanism in CdxHg1-xTe monocrystals. The obtained dependencies indicate a significant influence of surface recombination on the parameters of photodetectors operating in the mode of minority carrier extraction in CdxHg1-xTe-based devices.