Investigation of Photo-Electrical Properties in (Fe2O3-G)/n-Si Device

This study focuses on synthesizing iron oxide-graphene (α-Fe2O3-G) composite materials and evaluating their performance in devices constructed on n-type silicon (n-Si) semiconductors under dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2.59), barrier height (Φb = 0.74 eV), and series resistance (Rs = 70 kΩ) were determined using Thermionic Emission (TE) and Norde methods from I-V measurements taken in the dark. The device's photoelectrical properties were further examined under illumination, revealing that the Fe2O3-G/n-Si device exhibits self-powered behavior, operating without an external power source. The device achieved a maximum ON/OFF ratio of 32496, a specific detectivity (D*) of 26.6 Jones at 0 V, and a maximum responsivity (R) of 98 mAW-1 at -2 V. These results highlight the device's potential for efficient photodetection, particularly in self-powered applications.