OPTIMIZATION OF EPITAXIAL SILICON P-N JUNCTIONS TO IMPROVE THERMAL ENERGY CONVERSION EFFICIENCY

Epitaxial silicon p-n junctions are attracting attention for their potential applications in thermal energy conversion technologies due to their manufacturing efficiency and scalability. This paper explores the optimization of epitaxial silicon p-n junctions to improve thermal energy conversion efficiency, focusing on material properties, device structure, and fabrication techniques. We analyze different doping profiles, the role of interface quality, and thermal transport mechanisms in silicon-based p-n junctions. In addition, this study discusses challenges and opportunities in improving thermoelectric efficiency through design and manufacturing process improvements. The findings show that optimization of junction interfaces and careful control of doping concentrations can significantly improve energy conversion efficiency in silicon-based thermoelectric devices.