Detection of Herpes Biomolecule using Ge-based Dielectrically Modulated TFET

In this, dielectrically modulated TFET architecture based on Germanium is proposed for label-free detection of herpes virus. Comprehensive numerical device simulations performed on Silvaco 2D TCAD tool are used to study the performance of these biosensor. By altering the gate voltage, the effectiveness of this biosensor is evaluated based on current sensitivity. This paper will primarily focus on examining the biosensor's sensitivity and performance of a tunnel field-effect transistor (TFET) device. A detailed analysis of the device's ON current, OFF current and subthreshold swing has been conducted. For the specific case of k=70, the full cavity Ge-DMTFET exhibits an impressive sensitivity of 7.29 x 108, accompanied by an outstanding ION/IOFF ratio of 2.11 × 108 and a subthreshold swing of 56.366 mV/dec. The suggested TFET has a lower subthreshold slope, a higher ION/IOFF current ratio, and greater sensitivity as a result of its unique design. As a label-free biosensor, presence and absence of charge of different biomolecules are taken into account when evaluating the sensitivity of the device.