Losses Evaluation on Parallel Diodes Using a Double Pulse Test Circuit

This paper aims to optimize efficiency by combining diodes, such as SiC Schottky or PiN Si in parallel. For each combination, conduction and switching losses are estimated using datasheet in addition to double pulse test circuit validation. The parallelization of each diode is studied to propose the best configuration.

Institutions

Université Paris-Saclay (FR)
CentraleSupélec (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2025-06-05
DOI: https://doi.org/10.34746/epe2025-0122
Primary Topic: Silicon Carbide Semiconductor Technologies
Type: article
Field-Weighted Citation Impact: 0.00

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article

Losses Evaluation on Parallel Diodes Using a Double Pulse Test Circuit

Jun 5, 2025

SPIRE - Sciences Po Institutional REpository

Silicon Carbide Semiconductor Technologies

article

Losses Evaluation on Parallel Diodes Using a Double Pulse Test Circuit

June 5, 2025article en

Abstract

SPIRE - Sciences Po Institutional REpository

Université Paris-Saclay (FR), CentraleSupélec (FR)

Affordable and clean energy

Openalex Percentile: Top 58%

Silicon Carbide Semiconductor Technologies

DOI Open Access PDF OpenAlex

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Losses Evaluation on Parallel Diodes Using a Double Pulse Test Circuit · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS