Simulation of CMOS strip sensors

In high-energy physics, there is a need to investigate silicon sensor concepts that offer large-area coverage and cost-efficiency for particle tracking detectors. Sensors based on CMOS imaging technology present a promising alternative silicon sensor concept. As this technology follows an industry process, it can lower sensor production costs and enable fast and large-scale production from various vendors. The CMOS strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. The stitching technique was employed to develop two different strip sensor formats. The strip implant layout varies in doping concentration and width, allowing the study of various depletion concepts and electric field configurations. The performance of the first CMOS strip sensor prototype was evaluated based on several test beam campaigns conducted at the DESY II Test Beam Facility. In order to understand and validate the test beam data results, the detector response was simulated. This study shows how performance differences of the various strip sensor layouts can be investigated using Monte Carlo methods combined with TCAD Device simulations. In particular, the detector response simulated with Allpix2 is presented and compared to test beam data.