Investigation of Bending Performance of Flexible Optoelectronic Synapse Based on ZnO

We report an optoelectronic artificial synapse based on ZnO fabricated on a flexible substrate. The essential synaptic properties including excitatory postsynaptic current (EPSC), duration-time-dependent plasticity (DTDP), short-term memory (STM), long-term memory (LTM) and paired pulse facilitation (PPF) behaviours were simulated in flat state as well as in bent state. The device offers a PPF index of around 140% in both cases. This work highlights the impact of bending on the synaptic properties. Experimental results prove that the device is robust to bending giving comparable performance. This makes the device suitable for applications like wearable electronic devices, prosthetic devices and medical devices, etc.