Influence of line edge roughness in optical critical dimension metrology

\nWe present the impact of line edge roughness (LER) on the optical critical dimension (OCD) metrology of nanostructures. The consideration of LER in OCD requires numerically expensive forward models and is therefore usually neglected. We present an analytical approach that allows estimation of the impact on the uncertainty. Systematic differences between CD measured by SEM and OCD were observed in different experiments. While SEM is basically sensitive to the local volume density, optical methods are sensitive to the permittivity of the material. We discuss an analytical upper bound on the contribution of the LER. For high index gratings, the contribution is as high as 3.7 nm for TM-polarized light and 1.2 nm for TE-polarized light, making this crucial for sub-nanometer metrology.\n