Study of a solar cell with a silicon-based photodiode structure

This article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers. The results of studies aimed at creating Au-nCdS-nSi- pCdTe-Au photodiode structures for the spectral range of 1.0-1.4 microns with an area of 29 mm2, which were obtained by vacuum evaporation in a quasi-closed volume of sputtering layers of cadmium sulfide and cadmium telluride, are presented. onto a silicon substrate with resistivity ρ = 607.47 Ohm∙cm. A distinctive feature of the resulting photodiode Au - nCdS-nSi - pCdTe - Au structures are two-way sensitive and have a low capacitance value of C = 23.3 pF at room temperature.