Variation in the intensity ratio at each wavelength point of the Si

Aims. This study aims to investigate the deviation of the intensity ratio of the Si <ns0:sc>IV</ns0:sc> 1394 Å and 1403 Å emission lines from the expected value of 2 in the optically thin regime, as has been observed in many recent studies. Methods. We analyzed the integrated intensity ratio (R) and the wavelength-dependent ratio (r(Δλ)) in a small bifurcated eruption event observed by the Interface Region Imaging Spectrograph (IRIS). Results. Despite the relatively complex line profiles, the intensity ratio, R, of Si <ns0:sc>IV</ns0:sc> lines mostly remains greater than 2 in the loops. The ratio r(Δλ) varies in the line core and wings, changing distinctly from 2.0 to 3.3 along the wavelength. At certain positions, the Si <ns0:sc>IV</ns0:sc> 1394 Å and 1403 Å lines exhibit different Doppler velocities. Conclusions. When diagnosing the spectra of small active region events, not only the impact of opacity but also the influence of resonance scattering should be considered. We propose that the ratio r(Δλ) can serve as an indicator of the resonance scattering and opacity effect of the Si <ns0:sc>IV</ns0:sc> line.