HfO<sub>2</sub> Memristor-Based\nFlexible Radio Frequency\nSwitches

Flexible and wearable electronics are experiencing rapid\ngrowth\ndue to the increasing demand for multifunctional, lightweight, and\nportable devices. However, the growing demands of interactive applications\ndriven by the rise of AI reveal the inadequate connectivity of current\nconnection technologies. In this work, we successfully leverage memristive\ntechnology to develop a flexible radio frequency (RF) switch, optimized\nfor 6G-compatible communication systems and adaptable to flexible\napplications. The flexible RF switch demonstrates a low insertion\nloss (2 dB) and a cutoff frequency exceeding 840 GHz, and performance\nmetrics are maintained after 10<sup>6</sup> switching cycles and 2500\nmechanical bending cycles, showing excellent reliability and robustness.\nFurthermore, the RF switch is fully integrable with a photolithography-processable\npolyimide (PSPI) substrate, enabling efficient 2.5D integration with\nother RF components, such as RF antennas and interconnects. This technology\nholds significant promise to advance 6G communications in flexible\nelectronics, offering a scalable solution for high-speed data transmission\nin next-generation wearable devices.