Halide Perovskite\nPhotodiode Integrated CMOS Imager

Thin film photodiodes (TFPD) can supplement complementary\nmetal-oxide-semiconductor\n(CMOS) image sensor vision by their exotic optoelectronic properties\nassisted by their monolithic processability. Halide perovskites are\nknown to show outstanding optoelectronic properties, such as large\nabsorption coefficient, long carrier diffusion lengths, and high carrier\nmobility, leading to high external quantum efficiency (EQE) and fast\ncharge transport in photodiodes (PDs), especially compared with other\nthin-film photodiode candidates. In this paper, high-resolution two-dimensional\n(2D) and three-dimensional (3D) imaging capabilities are demonstrated\nusing perovskite photodetection material with a silicon (Si) read-out\nintegrated circuit (ROIC). The integration of this perovskite photodiode\n(PePD) on the Si ROIC provides fine resolution for 2D imaging. The\nfast carrier transport properties of the PePD enable depth sensing\nof objects using the same sensor. 3D imaging is demonstrated using\nthe proposed top-electrode controlled indirect time-of-flight (iToF)\noperation supported by the fast PD switching through the top common\nelectrode of the TFPD image sensor pixel. It is expected that the\nPePDs on Si ROIC could mark a significant milestone for the TFPD imaging\nplatform with their outstanding optoelectronic performance in combination\nwith the CMOS image sensor technology, not only for conventional 2D\nimaging but also by enabling extensions toward 3D sensing, promising\napplications in automotive, augmented reality (AR), and virtual reality\n(VR).