Attoampere\nLevel Leakage Current in Chemical Vapor\nDeposition-Grown Monolayer MoS<sub>2</sub> Dynamic Random-Access Memory\nin Trap-Assisted Tunneling Limit

MoS<sub>2</sub>, one of the most\nresearched two-dimensional semiconductor\nmaterials, has great potential as the channel material in dynamic\nrandom-access memory (DRAM) due to the low leakage current inherited\nfrom the atomically thin thickness, high band gap, and heavy effective\nmass. In this work, we fabricate one-transistor-one-capacitor (1T1C)\nDRAM using chemical vapor deposition (CVD)-grown monolayer (ML) MoS<sub>2</sub> in large area and confirm the ultralow leakage current of\napproximately 10<sup>–18</sup> A/μm, significantly lower\nthan the previous report (10<sup>–15</sup> A/μm) in two-transistor-zero-capacitor\n(2T0C) DRAM based on a few-layer MoS<sub>2</sub> flake. Through rigorous\nanalysis of leakage current considering thermionic emission, tunneling\nat the source/drain, Shockley–Read–Hall recombination,\nand trap-assisted tunneling (TAT) current, the TAT current is identified\nas the primary source of leakage current. These findings highlight\nthe potential of CVD-grown ML MoS<sub>2</sub> to extend the retention\ntime in DRAM and provide a deep understanding of the leakage current\nsources in MoS<sub>2</sub> 1T1C DRAM for further optimization to minimize\nthe leakage current.