FingerprintRecognitionMatrix Based on Photomultiplication-TypeOrganic Photodetectors with a Signal-to-Noise Ratio of 51,400

Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 10<sup>12</sup> Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.

Publication Details

Journal
Figshare
Published
2025-02-28
DOI
https://doi.org/10.1021/acsami.4c21810.s001
Primary Topic
Organic Electronics and Photovoltaics
Type
article
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article

FingerprintRecognitionMatrix Based on Photomultiplication-TypeOrganic Photodetectors with a Signal-to-Noise Ratio of 51,400

Figshare
Organic Electronics and Photovoltaics
article

FingerprintRecognitionMatrix Based on Photomultiplication-TypeOrganic Photodetectors with a Signal-to-Noise Ratio of 51,400

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Abstract

Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 10<sup>12</sup> Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.

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