Unraveling the Roleof Interfacial Charge Transferon Photoactivity and Anomalous Luminescence Quenching of V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/Protonatedg‑C<sub>3</sub>N<sub>4</sub> Heterostructures

Two-dimensional van der Waals heterostructures with exotic quantum phenomena have garnered a huge surge in the field of optoelectronic devices. Herein, we report spectroscopic evidence of efficient interfacial charge transfers at the interface of a novel 2D/2D V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> MXene/protonated g-C<sub>3</sub>N<sub>4</sub> (PCN) heterostructured thin film, demonstrating robust photosensitivity and a large exciton activation energy of 139.5 meV. Through temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we unravel the photophysical mechanism driving efficient charge transfer and photosensitivity in V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures. These heterostructures exhibit superior photosensitivity to white and UV light compared with either PCN or V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> pristine materials. Additionally, we observed significant PL quenching with unusual negative thermal quenching and extended charge carrier lifetime in the V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures across a broad temperature range of 70–370 K. Notably, at the elevated temperature of 370 K, the carrier lifetime was enhanced by more than 2-fold, making the heterostructures promising for optoelectronic applications. This work provides critical insight into the charge transfer mechanism between V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> MXene and PCN, opening a new avenue for rationally designing g-C<sub>3</sub>N<sub>4</sub>-based heterostructures for highly photosensitive optoelectronic devices.

Publication Details

Journal
Figshare
Published
2025-03-10
DOI
https://doi.org/10.1021/acsami.4c19729.s001
Primary Topic
2D Materials and Applications
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article

Unraveling the Roleof Interfacial Charge Transferon Photoactivity and Anomalous Luminescence Quenching of V4C3Tx/Protonatedg‑C3N4 Heterostructures

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2D Materials and Applications
article

Unraveling the Roleof Interfacial Charge Transferon Photoactivity and Anomalous Luminescence Quenching of V4C3Tx/Protonatedg‑C3N4 Heterostructures

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Abstract

Two-dimensional van der Waals heterostructures with exotic quantum phenomena have garnered a huge surge in the field of optoelectronic devices. Herein, we report spectroscopic evidence of efficient interfacial charge transfers at the interface of a novel 2D/2D V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> MXene/protonated g-C<sub>3</sub>N<sub>4</sub> (PCN) heterostructured thin film, demonstrating robust photosensitivity and a large exciton activation energy of 139.5 meV. Through temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we unravel the photophysical mechanism driving efficient charge transfer and photosensitivity in V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures. These heterostructures exhibit superior photosensitivity to white and UV light compared with either PCN or V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> pristine materials. Additionally, we observed significant PL quenching with unusual negative thermal quenching and extended charge carrier lifetime in the V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures across a broad temperature range of 70–370 K. Notably, at the elevated temperature of 370 K, the carrier lifetime was enhanced by more than 2-fold, making the heterostructures promising for optoelectronic applications. This work provides critical insight into the charge transfer mechanism between V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> MXene and PCN, opening a new avenue for rationally designing g-C<sub>3</sub>N<sub>4</sub>-based heterostructures for highly photosensitive optoelectronic devices.

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2D Materials and Applications
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