Insight into the Effect of h‑BN Modificationon the Performance of MoS₂ Phototransistors with van derWaals Contacts

To adapt to future applications in traditional silicon-based integrated circuits, most of the research on MoS₂ phototransistors is currently conducted on Si/SiO₂ substrates. However, the SiO₂ surface contains a large number of dangling bonds, defects, and impurities, which serve as charge traps that severely affect the performance of MoS₂ phototransistors. In this paper, we fabricated MoS₂ and h-BN/MoS₂ phototransistors with van der Waals contacts using an all-dry transfer technique. Compared to MoS₂ devices, the h-BN/MoS₂ devices exhibit a higher on/off ratio, larger carrier mobility, faster response speed, larger photoelectric fitting index (α), and smaller hysteresis, while there is a certain extent reduction in responsivity and external quantum efficiency. These results are attributed to the introduction of the h-BN substrate modification layer, which isolates the influence of dangling bonds, defects, and impurities of the SiO₂ substrate surface, significantly reducing hole traps at the interface. At the same time, this also weakens the photogating effect in the devices. This work comprehensively explains the interconnected effect and mechanisms of h-BN modification on various aspects of device performance in MoS₂ phototransistors fabricated using the all-dry transfer technique, paving the way for designing van der Waals optoelectronic devices with different functionalities and performance in the future.