η<sup>6</sup> Organometallic Functionalization\nof Hexagonal Boron Nitride: Implications for Multifunctional Molecular\nand Nanoscale Interfaces on Electronic Applications

Hexagonal boron nitride (h-BN), renowned\nfor its formidable\nattributestensile\nstrength (∼100 GPa), wide bandgap (∼6 eV), high thermal\nconductivity (227–280 W m<sup>–1</sup> K<sup>–1</sup>), and chemical stabilityposes a challenge in functionalization\ndue to its electronegativity variance between boron and nitrogen.\nIn a breakthrough, we present unprecedented organometallic functionalization\nvia chromium carbonyl vapor exposure. This approach forms a pristine\nη<sup>6</sup> bond that preserves lattice planarity and interconnectivity\nbetween B- and <i>N</i>-centers, with the metal engaging\neach h-BN ring. Computational analysis validates spontaneous surface\nreaction (Δ<i>G</i> = −35.50 kcal/mol). Further,\ncarbonyl groups seed silver nanoparticle growth, culminating in a\nconductive layer atop h-BN. This nondestructive, chemically versatile\nfunctionalization introduces a significant advancement in a multifunctional\nnanoscale interface, leveraging h-BN’s thermal and structural\nproperties for 2D FET electronic devices and sensing applications.