An Aerosol-Assisted\nChemical Vapor Deposition Route\nto Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties

Gallium oxide is a wide-bandgap compound semiconductor\nmaterial\nrenowned for its diverse applications spanning gas sensors, liquid\ncrystal displays, transparent electrodes, and ultraviolet detectors.\nThis paper details the aerosol assisted chemical vapor deposition\nsynthesis of tin doped gallium oxide thin films using gallium acetylacetonate\nand monobutyltin trichloride\ndissolved in methanol. It was observed that Sn doping resulted in\na reduction in the transmittance of Ga<sub>2</sub>O<sub>3</sub> films\nwithin the visible spectrum, while preserving the wide bandgap characteristics\nof 4.8 eV. Furthermore, Hall effect testing revealed a substantial\ndecrease in the resistivity of Sn-doped Ga<sub>2</sub>O<sub>3</sub> films, reducing it from 4.2 × 10<sup>6</sup> Ω cm to\n2 × 10<sup>5</sup> Ω cm for the 2.5 at. % Sn:Ga<sub>2</sub>O<sub>3</sub> compared to the nominally undoped Ga<sub>2</sub>O<sub>3</sub>.