CdS Nanorods in PhotoelectronicMemristors for ImprovedTarget Recognition Efficiency

Optoelectronic memristors have garnered significant attention for their critical applications in neuromorphic computing. The incorporation of materials with excellent absorption efficiency in the fabrication of photoelectric memristors can significantly enhance the image recognition capabilities. CdS nanorods (NRs) are semiconductors with strong UV light absorption that can effectively improve charge transport characteristics, reduce the loss caused by recombination at the crystal surface, and enhance the light absorption characteristics. In this work, an efficient hot injection method for controlling the growth of CdS NRs or nanosquares (NSs) by optimizing the proportion of dodecanethiol (DDT) is reported. Meanwhile, two-terminal optoelectronic memristors based on CdS NSs and CdS NRs are fabricated in which the conductance of the devices can be continuously modulated under electrical and optical stimulations of different widths/spacings/amplitudes. These advantages impart the device with exceptional electrical and optical synaptic functions including excitability, inhibition, paired-pulse facilitation, short-term/long-term plasticity, and memory-forgetting behavior. In addition, the enhancement of the image recognition efficiency of the device by CdS NRs is demonstrated in experiments with the recognition of the optical image “F”. This work offers valuable insights for material selection in the development of future neuromorphic devices.