Operating Principles\nof Gate Gap on Charge Transport\nin Split Gate Logic Thin-Film Transistors

Thin-film transistors with a split gate structure have\nbeen continuously\nstudied for integration into future electronic devices. By introduction\nof a gate gap, a thin-film transistor can perform various logic circuit\noperations within the single channel region. However, the impact of\nthe gate gap on the electrical characteristics of split gate thin-film\ntransistors has not been well investigated. In this study, we fabricated\nand characterized split gate thin-film transistors to realize logic\nOR and AND operations and conducted technology-aided computer design\nsimulations with Silvaco Atlas simulations for logic AND implementation.\nUsing technology computer-aided design simulations, we systematically\nanalyzed the impact of the gate gap on the overall device characteristics\nas well as electric fields, energy bands, and carrier concentrations\nwith cutlines in the channel region. Furthermore, we implemented the\nsplit gate transistor on a flexible paper substrate, demonstrating\nits possibility through up to 1000 bending cycle tests and indicating\nits potential for integration into more advanced electronic devices.