Te<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub> Shortwave\nInfrared Photodiode Arrays with Monolithic\nIntegration

Te<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub> shortwave infrared (SWIR) photodetectors show promise\nfor\nmonolithic integration with readout integrated circuits (ROIC), making\nit a potential alternative to conventional expensive SWIR photodetectors.\nHowever, challenges such as a high dark current density and insufficient\ndetection performance hinder their application in large-scale monolithic\nintegration. Herein, we develop a ZnO/Te<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub> heterojunction photodiode\nand synergistically address the interfacial elemental diffusion and\ndangling bonds via inserting a well-selected 0.3 nm amorphous TeO<sub>2</sub> interfacial layer. The optimized device achieves a reduced\ndark current density of −3.5 × 10<sup>–5</sup> A\ncm<sup>–2</sup> at −10 mV, a broad response from 300\nto 1700 nm, a room-temperature detectivity exceeding 2.03 × 10<sup>11</sup> Jones, and a 3 dB bandwidth of 173 kHz. Furthermore, for\nthe first time, we monolithically integrate the Te<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub> photodiodes on ROIC\n(64 × 64 pixels) with the largest-scale array among all Te<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub>-based\ndetectors. Finally, we demonstrate its applications in transmission\nimaging and substance identification.