Direct Observation of Electric‐Field‐Driven Phase Transitions Associated with Energy Storage in Antiferroelectric Films

Antiferroelectric materials are promising candidates for high-energy-density capacitors due to their reversible electric-field-induced phase transitions. However, the atomic-scale mechanism underlying the electric-field-driven antiferroelectric-to-ferroelectric (AFE-to-FE) transition, particularly in relation to high-performance energy storage, remains elusive. Here, we employ in situ aberration-corrected scanning transmission electron microscopy (STEM) to directly visualize the electric-field-driven AFE-to-FE transition in epitaxial PbZrO<sub>3</sub> (PZO) thin films. We reveal a sequential electric-field-driven transition pathway involving an intermediate orthorhombic ferrielectric phase (FiE<sub>O</sub>) and a monoclinic ferroelectric phase (FE<sub>M</sub>), ultimately stabilizing into a rhombohedral ferroelectric structure (FE<sub>R</sub>). This transformation is accompanied by a continuous reduction in the polarization modulation period, indicating enhanced dipole-dipole interaction coupling, which may improve their energy storage performance. Our experimental findings are corroborated by machine learning molecular dynamics simulations, providing quantitative insights into the structural evolution. This work illustrated the relationship between microscopic phase evolution dynamics and macroscopic energy storage behavior, offering a powerful strategy for the design and optimization of next-generation antiferroelectric energy storage materials.

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Publication Details

Journal
Advanced Science
Published
2025-12-21
DOI
https://doi.org/10.1002/advs.202517897
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Direct Observation of Electric‐Field‐Driven Phase Transitions Associated with Energy Storage in Antiferroelectric Films

Advanced Science
Ferroelectric and Piezoelectric Materials
article

Direct Observation of Electric‐Field‐Driven Phase Transitions Associated with Energy Storage in Antiferroelectric Films

article en

Abstract

Antiferroelectric materials are promising candidates for high-energy-density capacitors due to their reversible electric-field-induced phase transitions. However, the atomic-scale mechanism underlying the electric-field-driven antiferroelectric-to-ferroelectric (AFE-to-FE) transition, particularly in relation to high-performance energy storage, remains elusive. Here, we employ in situ aberration-corrected scanning transmission electron microscopy (STEM) to directly visualize the electric-field-driven AFE-to-FE transition in epitaxial PbZrO<sub>3</sub> (PZO) thin films. We reveal a sequential electric-field-driven transition pathway involving an intermediate orthorhombic ferrielectric phase (FiE<sub>O</sub>) and a monoclinic ferroelectric phase (FE<sub>M</sub>), ultimately stabilizing into a rhombohedral ferroelectric structure (FE<sub>R</sub>). This transformation is accompanied by a continuous reduction in the polarization modulation period, indicating enhanced dipole-dipole interaction coupling, which may improve their energy storage performance. Our experimental findings are corroborated by machine learning molecular dynamics simulations, providing quantitative insights into the structural evolution. This work illustrated the relationship between microscopic phase evolution dynamics and macroscopic energy storage behavior, offering a powerful strategy for the design and optimization of next-generation antiferroelectric energy storage materials.

Advanced ScienceVol. 13(13)
Hunan University of Science and Technology (CN), University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Lanzhou University of Technology (CN), Shenzhen Bay Laboratory (CN), Songshan Lake Materials Laboratory (CN), Institute of Physics (CN)
National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Liaoning Revitalization Talents Program, National Key Research and Development Program of China, Youth Innovation Promotion Association, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 66%
Ferroelectric and Piezoelectric Materials
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