Effect of Temperature on the Optoelectrical Properties of Photodetectors Based on Mo(S <i> _X </i> Se _{1– <i>X</i>} ) ₂ Alloys

Mo(SXSe1–X)2 alloys, which belong to the transition metal dichalcogenides (TMDs), have attracted considerable interest due to their tunable band gap and characteristic electrical and optical properties. As a result, they can find wide applications in optoelectronics. In this paper, the photodetectors based on monolayer Mo(SXSe1–X)2 alloys were fabricated and studied over a wide range of temperatures and illumination. They exhibit unprecedented performance in the wavelength range from 460 to 630 nm─high responsivity (R = 9.08 × 106 A W1–) and specific detectivity (D* = 9.38 × 1013 Jones). Their properties change nonlinearly with increasing temperature. The MoS2 and MoSe2-based photodetectors show the best properties at T = 300 K, while Mo(SXSe1–X)2-based photodetectors perform optimally at T = 250 K. In addition, we have proposed a design of buried electrodes intended to provide Ohmic contacts, over a wide range of ambient temperatures, with results indicating that this approach is highly promising, which has been confirmed in most of the investigated samples.