Schottky-gated transistors using chitosan extracted from marine crab

Amorphous chitosan nanoparticles (AChNPs) are extracted from marine crab shells for use as the active semiconductor material in paper-based electronics. The I-V characteristics of AChNPs exhibit an electron-driven rectifying behaviour at Schottky junctions. Additionally, when used in metal-semiconductor field-effect transistors (MESFETs), the AChNPs demonstrate an amplification output spanning three orders of magnitude and current modulation with an on/off current ratio of approximately 17,000. Hall effect measurements indicate an n-type semiconductor with a carrier concentration of 8.55 × 10<sup>10</sup>/cm<sup>3</sup>, which corresponds to a mobility of 15.27 cm<sup>2</sup>/Vs and an electric resistivity of 4.79 × 10<sup>6</sup> Ωcm at 298 K. The g value of the electron spin resonance (ESR) peak of AChNPs confirms that the electrons are generated from the aminyl N*-H radical, and photoemission yield spectroscopy reveals a gap energy of 5.21 eV. The proposed diode and MESFET offer substantial promise for future applications of flexible, renewable, and biodegradable paper-based electronic devices with energy storage properties.

Authors

Institutions

Publication Details

Journal
Scientific Reports
Published
2025-12-21
DOI
https://doi.org/10.1038/s41598-025-32796-z
Primary Topic
Advanced Sensor and Energy Harvesting Materials
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Schottky-gated transistors using chitosan extracted from marine crab

Tomonori Yokotsuka, Nobuyuki Kobayashi, Masahiko Kumadaki, N. Fujima et al.
Scientific Reports
Advanced Sensor and Energy Harvesting Materials
article

Schottky-gated transistors using chitosan extracted from marine crab

Tomonori Yokotsuka, Nobuyuki Kobayashi, Masahiko Kumadaki, N. Fujima, Toshiyuki Hashida, Mikio Fukuhara
article en

Abstract

Amorphous chitosan nanoparticles (AChNPs) are extracted from marine crab shells for use as the active semiconductor material in paper-based electronics. The I-V characteristics of AChNPs exhibit an electron-driven rectifying behaviour at Schottky junctions. Additionally, when used in metal-semiconductor field-effect transistors (MESFETs), the AChNPs demonstrate an amplification output spanning three orders of magnitude and current modulation with an on/off current ratio of approximately 17,000. Hall effect measurements indicate an n-type semiconductor with a carrier concentration of 8.55 × 10<sup>10</sup>/cm<sup>3</sup>, which corresponds to a mobility of 15.27 cm<sup>2</sup>/Vs and an electric resistivity of 4.79 × 10<sup>6</sup> Ωcm at 298 K. The g value of the electron spin resonance (ESR) peak of AChNPs confirms that the electrons are generated from the aminyl N*-H radical, and photoemission yield spectroscopy reveals a gap energy of 5.21 eV. The proposed diode and MESFET offer substantial promise for future applications of flexible, renewable, and biodegradable paper-based electronic devices with energy storage properties.

Scientific ReportsVol. 16(1)
Shizuoka University (JP), Tohoku University (JP), Dainichiseika (Japan) (JP), Semilab (Hungary) (HU)
Openalex Percentile: Top 59%
Advanced Sensor and Energy Harvesting Materials
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.