Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong candidates for future non‐volatile memory and logic‐in‐memory (LiM) technologies. While earlier reviews mainly offered broad overviews, this work introduces a conceptual framework connecting deposition methods, phase stability, and device performance. This work categorizes fabrication techniques (ALD, CVD, PVD, CSD) based on their influence on phase stabilization and transformation, supported by comparative tables and schematic diagrams illustrating their impact on FeFET operation. A dedicated section discusses reliability challenges (wake‐up, fatigue, imprint, retention loss), contrasting ferroelectric capacitors (FeCAPs) with FeFETs to highlight device‐level complexities. Additionally, a comparative performance table of reported FeFET stacks summarizes key metrics such as remanent polarization, threshold voltage control, retention, and endurance. By combining thorough comparison with conceptual categorization, this review provides both a structured perspective and practical insights into integrating HZO‐based FeFETs into future computing systems.