Close space physical vapor transport growth of SiC, doped layers and thin crystals

Close space physical vapor transport growth was applied to prepare SiC layer stacks for application in photonic applications. Due to flexible setting of the axial T-temperature gradient while keeping a low radial T-gradient, growth conditions for various SiC polytypes like 4H-SiC, 6H-SiC and also 3C-SiC are possible. Using 4° off-axis 4H-SiC seed wafers a high polytype stability of 25 to 150 µm thick layers grown on C-face as well as on Si-face substrates was observed. It is found that the ballistic growth regime enables a high efficiency of the dopant transfer, which enables highly p-type doped layer deposition. The found results indicate that CS-PVT can be used to replace epitaxial growth of layers for power electronic applications.