Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr

Van der Waals antiferromagnetic semiconductors are promising platforms for energy-efficient two-dimensional spintronics. However, their intrinsic spin degeneracy and the difficulty of achieving electrical spin control pose major challenges for practical device implementation. Here, we present a distinct spintronic platform based on an antiferromagnetic semiconductor CrSBr, in which carrier doping induced by gate-controlled intercalation drives a reversible, zero-field antiferromagnetic to ferromagnetic phase transition, enabling direct and full electrical control of both magnetic order and spin polarization. Exploiting this transition, we engineer CrSBr/graphene heterostructures that leverage interfacial charge transfer to spatially pattern magnetic phases, resulting in lateral spin valves with gate-controlled spin polarization reversal, all without ferromagnetic contacts. Crucially, this mechanism also enables electrical switching of magnetic order via spin-transfer torque at ultralow current densities (<10<sup>3</sup> A/cm<sup>2</sup>), demonstrating its efficiency and device compatibility. These findings open a new paradigm for reconfigurable, all-electrical spintronic systems based on van der Waals antiferromagnetic semiconductors.

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Publication Details

Journal
Nature Communications
Published
2025-12-19
DOI
https://doi.org/10.1038/s41467-025-67561-3
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04
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article

Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr

Kun Yan, Xiaobin Chen, Wu Shi, Yibin Zhao et al.
2 citations
Nature Communications
2D Materials and Applications
1.04
article

Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr

Kun Yan, Xiaobin Chen, Wu Shi, Yibin Zhao, Guangchun Zhao, Yingchun Cheng, Kunlin Yang, Jia‐Wei Mei, Zhe Yuan, Yi Liu, Jiaqi Liu, Zhe Wang, Yu Zhang, Cheng Zhang, Tuoyu Zhao, Qi Li, Zejing Guo, Jianting Ye
article en
2 citations

Abstract

Van der Waals antiferromagnetic semiconductors are promising platforms for energy-efficient two-dimensional spintronics. However, their intrinsic spin degeneracy and the difficulty of achieving electrical spin control pose major challenges for practical device implementation. Here, we present a distinct spintronic platform based on an antiferromagnetic semiconductor CrSBr, in which carrier doping induced by gate-controlled intercalation drives a reversible, zero-field antiferromagnetic to ferromagnetic phase transition, enabling direct and full electrical control of both magnetic order and spin polarization. Exploiting this transition, we engineer CrSBr/graphene heterostructures that leverage interfacial charge transfer to spatially pattern magnetic phases, resulting in lateral spin valves with gate-controlled spin polarization reversal, all without ferromagnetic contacts. Crucially, this mechanism also enables electrical switching of magnetic order via spin-transfer torque at ultralow current densities (<10<sup>3</sup> A/cm<sup>2</sup>), demonstrating its efficiency and device compatibility. These findings open a new paradigm for reconfigurable, all-electrical spintronic systems based on van der Waals antiferromagnetic semiconductors.

Nature CommunicationsVol. 17(1)
Nanjing Tech University (CN), University of Shanghai for Science and Technology (CN), University of Groningen (NL), Fudan University (CN), Beijing Normal University (CN), Southern University of Science and Technology (CN), Yanshan University (CN), The Synergetic Innovation Center for Advanced Materials (CN), Xi'an Jiaotong University (CN), Ministry of Industry and Information Technology (CN)
Openalex Percentile: Top 21%
2D Materials and Applications
1.04
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