High‐Performance NIR‐II Sn‐Based Perovskite LEDs Enabled by the Functionalization of Sulfaguanidine

Eco-friendly CsSnI<sub>3</sub>-based perovskite light-emitting diodes (PeLEDs) with the emission peak extending to the near-infrared-II (NIR-II) region hold tremendous potential for applications in biological monitoring, night vision, and optical communications. However, the various defects caused by the instability of Sn<sup>2+</sup> within the CsSnI<sub>3</sub> film, and the non-equilibrium carrier injection rate in the devices are the two major factors that limit the device performance. Here, we report high-performance NIR-II CsSnI<sub>3</sub>-based PeLEDs achieved by employing functional sulfaguanidine (SG) molecules. Due to the strong S═O─Sn coordination bonds, NH<sub>2</sub>···I<sup>-</sup> hydrogen bonds could be formed between CsSnI<sub>3</sub> and SG, which effectively eliminated various Sn(II)-related defects in the CsSnI<sub>3</sub> film. Moreover, the SG molecules significantly improved the morphological uniformity and regulated the carrier injection balance, resulting in more balanced carrier injection that enhanced the effective radiation recombination rate. Consequently, the optimized CsSnI<sub>3</sub>-SG PeLEDs achieved a breakthrough external quantum efficiency (EQE) of 8.1%, which is the highest efficiency reported for CsSnI<sub>3</sub>-based PeLEDs to date.

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Publication Details

Journal
Advanced Materials
Published
2025-12-19
DOI
https://doi.org/10.1002/adma.202516632
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

High‐Performance NIR‐II Sn‐Based Perovskite LEDs Enabled by the Functionalization of Sulfaguanidine

Yi Bi, Renjing Chen, Zongwen Liu, Xin Tong et al.
Advanced Materials
Perovskite Materials and Applications
article

High‐Performance NIR‐II Sn‐Based Perovskite LEDs Enabled by the Functionalization of Sulfaguanidine

Yi Bi, Renjing Chen, Zongwen Liu, Xin Tong, Zhenchao Wang, Zhanhua Wei, Kebin Lin, Ninggui Ma, Zhuojian Li, Chunli Zhao, Zhiming M. Wang, Jiaqi Wang, Yang Ren, Junnan Wang, Xiuling Li, Zixun Zhao, Han Liu, Jinli Liu, Yingjie Zhao, Xiang Guan, Shurui Chi
article en

Abstract

Eco-friendly CsSnI<sub>3</sub>-based perovskite light-emitting diodes (PeLEDs) with the emission peak extending to the near-infrared-II (NIR-II) region hold tremendous potential for applications in biological monitoring, night vision, and optical communications. However, the various defects caused by the instability of Sn<sup>2+</sup> within the CsSnI<sub>3</sub> film, and the non-equilibrium carrier injection rate in the devices are the two major factors that limit the device performance. Here, we report high-performance NIR-II CsSnI<sub>3</sub>-based PeLEDs achieved by employing functional sulfaguanidine (SG) molecules. Due to the strong S═O─Sn coordination bonds, NH<sub>2</sub>···I<sup>-</sup> hydrogen bonds could be formed between CsSnI<sub>3</sub> and SG, which effectively eliminated various Sn(II)-related defects in the CsSnI<sub>3</sub> film. Moreover, the SG molecules significantly improved the morphological uniformity and regulated the carrier injection balance, resulting in more balanced carrier injection that enhanced the effective radiation recombination rate. Consequently, the optimized CsSnI<sub>3</sub>-SG PeLEDs achieved a breakthrough external quantum efficiency (EQE) of 8.1%, which is the highest efficiency reported for CsSnI<sub>3</sub>-based PeLEDs to date.

Advanced MaterialsVol. 38(9)
Huaqiao University (CN), University of Electronic Science and Technology of China (CN), City University of Hong Kong (HK), Zhengzhou University (CN), Henan Tianguan Group (China) (CN), City University of Hong Kong, Shenzhen Research Institute (CN), University of Hong Kong (HK)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 58%
Perovskite Materials and Applications
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