Electrodeposition for nanoprecision manufacturing of integrated circuits: A new paradigm from molecular design to multiscale modeling

The continuous advancement of integrated circuit (IC) manufacturing technology has posed unprecedented challenges to the electronic electroplating process, with its core lying in achieving precise regulation of metal deposition behavior within micro/nanoscale structures, especially those with high aspect ratios (HAR). This review systematically summarizes the key progress in the research on multi-scale metal nucleation and growth mechanisms in IC electronic electroplating. We first analyze the unique mechanisms of mass transfer and electric field distribution at the micro/nanoscale, revealing the electric field inhomogeneity caused by geometric effects and polarization effects in HAR structures, as well as the diffusion-dominated mass transfer process. Furthermore, we delve into the complexity of additive effects, including their adsorption behavior in nano-confined spaces and the intricate synergistic and competitive relationships among inhibitors, accelerators, and levelers, while reviewing the development of innovative additives based on molecular design. Targeting the aforementioned complex system involving multi-physics and multi-scale coupling, this paper focuses on elaborating the construction methods of cross-scale theoretical models, the latest advances in multi-physics coupling solution technologies, and the enormous potential of machine learning (ML) and artificial intelligence (AI) in enhancing model predictive capabilities and optimizing processes. Finally, we prospect the frontier development directions such as novel electroplating processes, in-situ monitoring and feedback control technologies, exploration of new material systems, and process integration and equipment innovation. This review aims to provide a comprehensive theoretical framework and technical perspective for in-depth understanding of the fundamental mechanisms of micro/nano electronic electroplating and the development of next-generation high-performance interconnect technologies.