Atomically Thin ITO Transistor Matrix for Monolithic Integration of Ultrabright Micro-LED Displays

The realization of ultrabright Micro-LED displays critically depends on the ability of backplane driving circuits to deliver high current densities to each pixel. Here, we report a high-performance transistor technology based on ultrathin indium tin oxide (ITO), which offers superior electrical properties compared to conventional TFT backplane. To address the challenge of high carrier concentration in ITO─typically manifesting as a degenerate semiconductor─we introduce a controllable in situ oxidation and thickness regulation process to modulate the doping concentration. The optimized ITO TFT backplanes are monolithically integrated with Micro-LED chips at the wafer level, contributing 8.4% of the total power consumption for the integrated microdisplay. Luminance values of 3.7 × 10<sup>6</sup> nits for blue and 1.6 × 10<sup>7</sup> nits for green emission are also achieved, meeting the demands of high-brightness applications. This work presents a new strategy for high-current-density Micro-LED driving and provides a practical pathway toward scalable, ultrabright microdisplay technologies.

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Publication Details

Journal
Nano Letters
Published
2025-12-18
DOI
https://doi.org/10.1021/acs.nanolett.5c05130
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
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article

Atomically Thin ITO Transistor Matrix for Monolithic Integration of Ultrabright Micro-LED Displays

Ziyang Gan, Qijun Zong, Xu Chen, Weihuang Xiao et al.
Nano Letters
Thin-Film Transistor Technologies
article

Atomically Thin ITO Transistor Matrix for Monolithic Integration of Ultrabright Micro-LED Displays

Ziyang Gan, Qijun Zong, Xu Chen, Weihuang Xiao, Kexin Hao, Haifeng Wu, Jian Hu, Bobo Tian, Xudong Yang, Yizhe Wang, Anlian Pan, Junjie Zhang, Dong Li, Xiao Wang, Ziwei Li, Sitong Chen, Xiaoqin Liao, Xiaoming Zhao
article en

Abstract

The realization of ultrabright Micro-LED displays critically depends on the ability of backplane driving circuits to deliver high current densities to each pixel. Here, we report a high-performance transistor technology based on ultrathin indium tin oxide (ITO), which offers superior electrical properties compared to conventional TFT backplane. To address the challenge of high carrier concentration in ITO─typically manifesting as a degenerate semiconductor─we introduce a controllable in situ oxidation and thickness regulation process to modulate the doping concentration. The optimized ITO TFT backplanes are monolithically integrated with Micro-LED chips at the wafer level, contributing 8.4% of the total power consumption for the integrated microdisplay. Luminance values of 3.7 × 10<sup>6</sup> nits for blue and 1.6 × 10<sup>7</sup> nits for green emission are also achieved, meeting the demands of high-brightness applications. This work presents a new strategy for high-current-density Micro-LED driving and provides a practical pathway toward scalable, ultrabright microdisplay technologies.

Nano LettersVol. 25(52)
Hunan University (CN), Hunan Normal University (CN), Integrated Optoelectronics (Norway) (NO), Cloud Computing Center (CN), Shenzhen Technology University (CN), State Key Laboratory of Chemobiosensing and Chemometrics (CN), East China Normal University (CN)
Openalex Percentile: Top 58%
Thin-Film Transistor Technologies
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