Chemical vapor deposition of compound semiconductors: process simulation and experimental validation

Abstract Chemical vapor deposition (CVD) is fundamental to semiconductor nanotechnology, yet many aspects of its processes and underlying physical and chemical phenomena remain unexplained. This is because CVD is a complex system involving the elementary growth processes of (1) gas-phase reactions, (2) surface processes, and (3) solid-phase diffusion. This review introduces the following research topics, utilizing theoretical approaches that integrate simulations of each fundamental process: the influence of CVD conditions on the residual impurity concentration, surface morphology, and heterointerface flatness. Through integrated simulation, physical and chemical insights that cannot be obtained from simulations of individual elementary growth processes are revealed.

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Publication Details

Journal
Applied Physics Express
Published
2025-12-18
DOI
https://doi.org/10.35848/1882-0786/ae2f19
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73
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Chemical vapor deposition of compound semiconductors: process simulation and experimental validation

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article

Chemical vapor deposition of compound semiconductors: process simulation and experimental validation

Paweł Kempisty, Akira Kusaba, Yoshihiro Kangawa, Marta A. Chabowska, Hristina Popova, Toru Akiyama, Shugo Nitta, Hideto Miyake, Motoaki Iwaya, Magdalena A. Załuska–Kotur
article en
1 citations

Abstract

Abstract Chemical vapor deposition (CVD) is fundamental to semiconductor nanotechnology, yet many aspects of its processes and underlying physical and chemical phenomena remain unexplained. This is because CVD is a complex system involving the elementary growth processes of (1) gas-phase reactions, (2) surface processes, and (3) solid-phase diffusion. This review introduces the following research topics, utilizing theoretical approaches that integrate simulations of each fundamental process: the influence of CVD conditions on the residual impurity concentration, surface morphology, and heterointerface flatness. Through integrated simulation, physical and chemical insights that cannot be obtained from simulations of individual elementary growth processes are revealed.

Applied Physics ExpressVol. 19(1)
Kyushu University (JP), Mie University (JP), Bulgarian Academy of Sciences (BG), Institute of Physical Chemistry (BG), Institute of High Pressure Physics (PL), Mie University Hospital (JP), Meijo University (JP), Polish Academy of Sciences (PL)
Openalex Percentile: Top 21%
Semiconductor materials and devices
0.73
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