Recent Advances in MoTe ₂ Thin Films: Synthesis, Material Properties, and Emerging Applications

MoTe2, a notable member of the transition metal dichalcogenides, has attracted significant research interest due to its distinctive properties. This review summarizes recent advances in MoTe2 thin films, focusing on their properties, synthesis, and applications. We first discuss the structure–property relationships, particularly how crystal structure influences electronic, optical, and transport properties, along with environmental stability. Various synthesis methods are examined, including mechanical exfoliation, chemical vapor deposition, molecular beam epitaxy, solution-phase exfoliation, and wet-chemical approaches, as well as postsynthesis phase engineering techniques. MoTe2 demonstrates considerable potential in rigid and flexible electronics, optoelectronics, electrochemical energy storage, hydrogen evolution reaction catalysis, and quantum devices. However, challenges remain in achieving large-scale, high-quality, phase-controllable films with improved stability. Future research should prioritize synthesis optimization, performance enhancement, and exploration of novel functionalities for next-generation technologies.