Magnetic induction-based condition monitoring of IGBT bond wires using intensity and distribution slope analysis

The Insulated Gate Bipolar Transistor (IGBT) is the core component of power electronic equipment. Selecting appropriate characteristic parameters to represent the aging state of IGBT modules is essential for improving system operation and reliability. This paper focuses on the Infineon IGBT module (FF50R12RT4) as the research subject. Through theoretical derivation, magnetic induction intensity is proposed as a characteristic parameter for monitoring the state of the IGBT bond wire. Based on the electric-thermal-magnetic finite element model of the module, the change rule of the characteristic quantity when the module is aging and failing is investigated. Experimental validations are performed to verify the model. The results show that magnetic induction intensity provides significant advantages in monitoring bond wire aging.