HgTe Quantum Dots for Short-Wave Infrared Photoconductive Detectors
HgTe quantum dots offer avenues for developing next-generation infrared detectors. However, the high toxicity of the current synthesis technique involving HgCl2 and the low reproducibility of the classical hot injection method hinder large-scale production. This study synthesized HgTe quantum dots exhibiting a response at 1550 nm by replacing HgCl2 with lower toxicity HgI2 via flask synthesis and capillary synthesis methods at room temperature. Photoconductive devices were made by spin-coating with synthesized HgTe quantum dots, achieving a responsivity of 0.924 A/W and detectivity of 1.386 × 109 Jones under 1550 nm illumination at room temperature and 1 V bias.
Authors
- Chuantong Cheng (ORCID: https://orcid.org/0000-0002-6130-5524)
- Chaoqi Hao
- Zhisheng Li (ORCID: https://orcid.org/0000-0002-5983-9412)
- Zhaowei Zhu (ORCID: https://orcid.org/0000-0003-2890-0169)
- Xu Zhang (ORCID: https://orcid.org/0000-0002-8651-5421)
- Yuehua Li (ORCID: https://orcid.org/0000-0002-3903-0253)
- Mengjie Zhang (ORCID: https://orcid.org/0009-0007-0137-6949)
- Li-Ting Huang
Institutions
- Tianjin University (CN)
- Chinese Academy of Sciences (CN)
- Integrated Optoelectronics (Norway) (NO)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
- China Agricultural University (CN)
Publication Details
- Journal
- ACS Applied Nano Materials
- Published
- 2025-12-18
- DOI
- https://doi.org/10.1021/acsanm.5c04807
- Citations
- 1
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.73