van Hove Source for Ultralow Power Field-Effect Transistors

Field-effect transistors (FETs) with sub-60 mV/decade subthreshold swing (SS) at room temperature are highly sought after for enabling next-generation ultralow-power integrated circuits (ICs). We present a van Hove source (VHS) FET that exploits the steeply declining density of states (DOS) at the van Hove singularity in a one-dimensional (1D) semiconductor to overcome the Boltzmann limit on switching performance in conventional FETs. The VHS FETs built on individual semiconducting carbon nanotubes (CNT) exhibit a room temperature SS of 49 mV/decade. This steep switching behavior is achieved by electrostatically tuning the source Fermi level through a control gate. Compared with the 22-nanometer-node silicon FETs, a comparable on-state current is obtained in our VHS FETs with a 450 nm gate length but at a reduced supply voltage of 0.5 V (versus 0.75 V for silicon). VHS engineering may offer a generalizable pathway for 1D semiconductors to lower SS and even construct steep-slope transistors that simultaneously deliver ultralow power, high performance, and scalability.

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Publication Details

Journal
ACS Nano
Published
2025-12-17
DOI
https://doi.org/10.1021/acsnano.5c17157
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
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article

van Hove Source for Ultralow Power Field-Effect Transistors

Chuanhong Jin, Boxiang Zhang, Jia Si, Kaili Jiang et al.
ACS Nano
Advancements in Semiconductor Devices and Circuit Design
article

van Hove Source for Ultralow Power Field-Effect Transistors

Chuanhong Jin, Boxiang Zhang, Jia Si, Kaili Jiang, Zaizhe Zhang, Xiaobo Lu, Xiaosong Deng, Hang Zhou, Jiankun Li, Tian Pei, Zebin Liu, Yizhan Zhuang, Baizhe He, Zhiyong Zhang, Fei Liu, Xiaobing Ma
article en

Abstract

Field-effect transistors (FETs) with sub-60 mV/decade subthreshold swing (SS) at room temperature are highly sought after for enabling next-generation ultralow-power integrated circuits (ICs). We present a van Hove source (VHS) FET that exploits the steeply declining density of states (DOS) at the van Hove singularity in a one-dimensional (1D) semiconductor to overcome the Boltzmann limit on switching performance in conventional FETs. The VHS FETs built on individual semiconducting carbon nanotubes (CNT) exhibit a room temperature SS of 49 mV/decade. This steep switching behavior is achieved by electrostatically tuning the source Fermi level through a control gate. Compared with the 22-nanometer-node silicon FETs, a comparable on-state current is obtained in our VHS FETs with a 450 nm gate length but at a reduced supply voltage of 0.5 V (versus 0.75 V for silicon). VHS engineering may offer a generalizable pathway for 1D semiconductors to lower SS and even construct steep-slope transistors that simultaneously deliver ultralow power, high performance, and scalability.

ACS NanoVol. 20(1)
Beijing University of Posts and Telecommunications (CN), Peking University (CN), Division of Materials Science and Engineering (AU), Quantum Design (Germany) (DE), Beijing Academy of Quantum Information Sciences (CN), ASM International (Finland) (FI), Nano Carbon (Poland) (PL), State Key Laboratory of Low-Dimensional Quantum Physics, Zhejiang University (CN), Tsinghua University (CN)
Openalex Percentile: Top 59%
Advancements in Semiconductor Devices and Circuit Design
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