Flash sintering of HfO <sub>2</sub> at 1050°C in a bilayer with 8YSZ

Abstract Some materials are difficult to sinter by flash method, as they require both extremely high temperatures and intense electric fields. For such materials, a common strategy is to mix them with a powder of an easily flashable material that acts as a catalyst. Here we demonstrate that HfO 2 , which is difficult to flash even at very high fields and very high furnace temperatures, can be sintered by flash in a bilayer configuration with yttria‐stabilized zirconia. Flash in zirconia layer propagated into the hafnia layer, made from monoclinic powders, causing it to flash and sinter at 800°C. The HfO 2 layer sintered to a relative density of ∼95%, with a grain size of 470 nm. Dielectric constant of the flash‐sintered HfO 2 was comparable to conventionally sintered and FAST/spark plasma‐sintered–processed specimens. The present method offers a viable route to overcome the long‐standing challenge of densifying high‐resistance refractory ceramics without the use of sintering aids.

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Publication Details

Journal
Journal of the American Ceramic Society
Published
2025-12-17
DOI
https://doi.org/10.1111/jace.70460
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Flash sintering of HfO 2 at 1050°C in a bilayer with 8YSZ

Pranav Rai, Devinder Yadav, Vibha Mishra
Journal of the American Ceramic Society
Semiconductor materials and devices
article

Flash sintering of HfO 2 at 1050°C in a bilayer with 8YSZ

Pranav Rai, Devinder Yadav, Vibha Mishra
article en

Abstract

Abstract Some materials are difficult to sinter by flash method, as they require both extremely high temperatures and intense electric fields. For such materials, a common strategy is to mix them with a powder of an easily flashable material that acts as a catalyst. Here we demonstrate that HfO 2 , which is difficult to flash even at very high fields and very high furnace temperatures, can be sintered by flash in a bilayer configuration with yttria‐stabilized zirconia. Flash in zirconia layer propagated into the hafnia layer, made from monoclinic powders, causing it to flash and sinter at 800°C. The HfO 2 layer sintered to a relative density of ∼95%, with a grain size of 470 nm. Dielectric constant of the flash‐sintered HfO 2 was comparable to conventionally sintered and FAST/spark plasma‐sintered–processed specimens. The present method offers a viable route to overcome the long‐standing challenge of densifying high‐resistance refractory ceramics without the use of sintering aids.

Journal of the American Ceramic SocietyVol. 109(1)
Indian Institute of Technology Patna (IN)
Indian Institute of Technology, Patna, Indian Institute of Technology Madras
Openalex Percentile: Top 59%
Semiconductor materials and devices
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