Thickness‐Driven Modulation of Electronic Transport in SnSe <sub>2</sub> ‐grown Films by Low‐Temperature Atomic Layer Deposition
ABSTRACT Low‐temperature atomic layer deposition (ALD) is increasingly important for the integration of layered metal dichalcogenides such as tin diselenide (SnSe 2 ) into advanced nanoelectronic devices, where compatibility with temperature‐sensitive substrates and precise thickness control are essential. Using a novel and highly reactive selenium precursor, namely, bis(trimethylstannyl)selenide or Se(SnMe 3 ) 2 , SnSe 2 films are deposited at reduced temperatures. As‐deposited films are initially amorphous, however, post‐deposition annealing at 250°C induces crystallization. Structural analysis reveals a clear evolution in crystallinity: ultrathin films (∼25 nm) exhibit nearly single‐crystalline, defect‐free domains, while thicker films (∼100 nm) transition to a polycrystalline structure. This controlled variation in crystal quality directly influences the electronic transport properties, demonstrating the potential of low‐temperature ALD combined with mild annealing for scalable fabrication of high‐performance, thickness‐engineered SnSe 2 ‐based devices.
Authors
- Jaakko Julin (ORCID: https://orcid.org/0000-0003-4376-891X)
- E. Blanco (ORCID: https://orcid.org/0000-0002-2234-1477)
- Filip Bureš (ORCID: https://orcid.org/0000-0002-2832-6673)
- J. Outón
- Ralf Tonner (ORCID: https://orcid.org/0000-0002-6759-8559)
- Jaroslav Charvot (ORCID: https://orcid.org/0000-0002-7811-015X)
- Sebastian Lehmann (ORCID: https://orcid.org/0000-0002-4091-905X)
- Daniel Wolf (ORCID: https://orcid.org/0000-0001-5000-8578)
- Amin Bahrami (ORCID: https://orcid.org/0000-0001-8851-7351)
- Lars Giebeler (ORCID: https://orcid.org/0000-0002-6703-8447)
- Angelika Wrzesińska (ORCID: https://orcid.org/0000-0003-0434-0638)
- Alejandra Ruiz‐Clavijo (ORCID: https://orcid.org/0000-0002-9585-6658)
- Fabian Pieck (ORCID: https://orcid.org/0000-0001-6912-2725)
- Yana Vaynzof (ORCID: https://orcid.org/0000-0002-0783-0707)
- Kornelius Nielsch
Institutions
- University of Pardubice (CZ)
- Leibniz Institute for Solid State and Materials Research (DE)
- Universidad de Cádiz (ES)
- Technische Universität Dresden (DE)
- Leipzig University (DE)
- University of Jyväskylä (FI)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2025-12-17
- DOI
- https://doi.org/10.1002/aelm.202500560
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Deutsche Forschungsgemeinschaft
- Universität Leipzig