A Design of 1.2–3.6 GHz Power Amplifier Based on Filters of Negative Feedback Network

This work proposes a broadband, high-efficiency extended continuous class-F (ECCF) power amplifier (PA) with a negative-feedback network structure. Compared with the traditional direct cascade connection of a PA and a filter, the design introduces a novel negative feedback filter structure. The transistor and filter synthesis network co-design method aims to compensate for the gain and efficiency drop of this PA in both high and low frequency bands, resulting in relatively flat gain and efficiency performance over a wide band. Consequently, there is a need to enhance the security and efficiency of wireless communication systems. This work verifies the proposed method using a designed and fabricated 10 W GaN HEMT device. The measured data reveal that the designed PA achieves 100% relative bandwidth from 1.2 GHz to 3.6 GHz, with a drain efficiency (DE) of 59.5~67.4%, an output power of 38.8~41.8 dBm, and a large signal gain of 8.8~11.8 dB.

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Publication Details

Journal
Electronics
Published
2025-12-17
DOI
https://doi.org/10.3390/electronics14244944
Primary Topic
Advanced Power Amplifier Design
Type
article
Field-Weighted Citation Impact
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article

A Design of 1.2–3.6 GHz Power Amplifier Based on Filters of Negative Feedback Network

Chunwei Cai, Zhengxian Meng, Zhiyong Ding, Zhenghao Yang et al.
Electronics
Advanced Power Amplifier Design
article

A Design of 1.2–3.6 GHz Power Amplifier Based on Filters of Negative Feedback Network

Chunwei Cai, Zhengxian Meng, Zhiyong Ding, Zhenghao Yang, Zhiqun Cheng, Xiaogang Wang, Qiuyun Fu
article en

Abstract

This work proposes a broadband, high-efficiency extended continuous class-F (ECCF) power amplifier (PA) with a negative-feedback network structure. Compared with the traditional direct cascade connection of a PA and a filter, the design introduces a novel negative feedback filter structure. The transistor and filter synthesis network co-design method aims to compensate for the gain and efficiency drop of this PA in both high and low frequency bands, resulting in relatively flat gain and efficiency performance over a wide band. Consequently, there is a need to enhance the security and efficiency of wireless communication systems. This work verifies the proposed method using a designed and fabricated 10 W GaN HEMT device. The measured data reveal that the designed PA achieves 100% relative bandwidth from 1.2 GHz to 3.6 GHz, with a drain efficiency (DE) of 59.5~67.4%, an output power of 38.8~41.8 dBm, and a large signal gain of 8.8~11.8 dB.

ElectronicsVol. 14(24)
Nanjing University of Information Science and Technology (CN), Wuhan Science and Technology Bureau (CN), Xinjiang Institute of Engineering (CN), Wuchang University of Technology (CN)
Openalex Percentile: Top 59%
Advanced Power Amplifier Design
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