UV-Enhanced Artificial Synapses Based on WSe2-SrAl2O4 Composites

Optoelectronic synapses based on transition metal dichalcogenides have received much attention as artificial synapses due to their good stability in the air and excellent photoelectric properties; however, they suffer from ultraviolet light-triggered synapses due to the ultraviolet insensitivity of transition metal dichalcogenides. In this paper, an ultraviolet-enhanced artificial synapse was achieved on WSe₂ combined with SrAl₂O₄: 6% Eu²⁺, 4% Dy³⁺ phosphor. The strong ultraviolet absorption of SrAl₂O₄: 6% Eu²⁺, 4% Dy³⁺ phosphor and radiation reabsorption are responsible for the ultraviolet-enhanced response of the WSe₂-SrAl₂O₄ synapse. The excitatory post-synaptic current of the WSe₂-SrAl₂O₄ synapse triggered by a single pulse at 365 nm was enhanced 4 times more than that from 2D WSe₂, while the decay time of the post-synaptic current was 9.7 times longer than those from the WSe₂ device. The excellent ultraviolet sensitivity and decay time promoted the good regulation of the synaptic plasticity of the WSe₂-SrAl₂O₄ device in terms of power densities, pulse widths, pulse intervals, and pulse numbers. Furthermore, outstanding learning behavior was simulated successfully with a forgetting time of 25 s. Handwritten digit recognition was realized with 96.39% accuracy, based on the synaptic weight of the WSe₂-SrAl₂O₄ synapse. This work provides a new pathway for ultraviolet photoelectric synapse and brain-inspired computing.