A cage-structured GaN allotrope with unconventional bonding breaks the ductility barrier of wide band gap semiconductors
A mechanically ductile, thermally stable GaN allotrope with a 3.05 eV band gap and broad optical absorption, engineered for next-generation flexible optoelectronics and power devices.
Authors
- Maryam Sarwar (ORCID: https://orcid.org/0009-0009-5744-1070)
- Pu Huang (ORCID: https://orcid.org/0000-0003-0738-3908)
- Ghulam Dastgeer (ORCID: https://orcid.org/0000-0001-9078-6139)
- Suling Shen
- Zhengbiao Ouyang (ORCID: https://orcid.org/0000-0002-1466-7813)
- Kashif Hussain (ORCID: https://orcid.org/0000-0001-5448-3309)
- Qiang Liu (ORCID: https://orcid.org/0000-0002-4518-5921)
- Muhammad Abbas (ORCID: https://orcid.org/0000-0002-2640-3209)
- Fatima Munir (ORCID: https://orcid.org/0009-0004-2163-5344)
Institutions
- Beijing Institute of Technology (CN)
- University of the Punjab (PK)
- Shenzhen University (CN)
- Shanxi University (CN)
- Peking University (CN)
- Dongguan University of Technology (CN)
- Sejong University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-12-17
- DOI
- https://doi.org/10.1039/d5tc03471j
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00