Impact of Temperature on Radio Frequency and Analog Performance of High-K Dual-Metal and Dielectric-Pocket Nanotube Field-Effect Transistors (FETs)

This article presents a detailed comparative analysis of the analog and radio frequency (RF) performance of HK-DM-NTFETs and HK-DP-NTFETs across a temperature range of 250 K to 400 K. The high-k (HK) dielectric improves the on-state saturation current, reduces gate leakage, and minimizes self-heating effects, while structural innovations such as dielectric pocket (DP) and dual-metal (DM) configurations are employed to further optimize device behavior. The DP structure is effective in suppressing off-state leakage current and enhancing electrostatic control, whereas the DM configuration primarily improves short-channel effects such as drain-induced barrier lowering and sub-threshold swing. Simulation results, obtained using a calibrated TCAD device simulator, demonstrate that HK-DP-NTFETs consistently outperform their HK-DM counterparts across all operating temperatures. The HK-DP device exhibits ~13% higher drain current, ~50% lower gate capacitance, and superior cut-off frequency performance, resulting in enhanced drive capability, reduced capacitive delay, and better high-frequency response. Moreover, the HK-DP structure maintains its advantages under elevated temperatures, indicating stronger thermal resilience. These findings firmly establish HK-DP-NTFETs as the superior architecture for achieving robust analog and RF performance in future nanoscale applications.