PEPR ADICT: Fabrication of RF switches based on MoS$_2$ and WS$_2$

In the framework of the ADICT project, the partner IEMN-CARBON aims to produce components based on 2D materials [1-3], for targeted PEPR projects. The aim is to extract their electrical properties and propose applications for high-frequency analogue electronics.The first components to be explored are RF switches based on 2D materials.Our work has led us to develop technological processes that are compatible with those of our partners (CEA Leti). The material used is MoS2 by ALD (Atomic Layer Deposition) growth, requiring a wet or dry transfer step. The growth and the fabrication process are managed on a 200 mm silicon substrate.This approach will be compatible with materials obtained by MBE (Molecular Beam Epitaxy) growth.A second approach has been developed with our partners at LAF, where 2D materials (WS2) are obtained by PLD (Pulse Laser Deposition) growth, requiring no transfer step, given the lower thermal budget.The performance of the devices obtained is in line with the simulations carried out at IEMN. The performances obtained are already state-of-the-art for this type of component.

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SPIRE - Sciences Po Institutional REpository
Published
2025-01-01
Primary Topic
2D Materials and Applications
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article
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article

PEPR ADICT: Fabrication of RF switches based on MoS$_2$ and WS$_2$

Matthieu Jamet, S. Skrzypczak, X. Wallart, Pierre Sénéor et al.
SPIRE - Sciences Po Institutional REpository
2D Materials and Applications
article

PEPR ADICT: Fabrication of RF switches based on MoS$_2$ and WS$_2$

Matthieu Jamet, S. Skrzypczak, X. Wallart, Pierre Sénéor, Bruno Reig, Lucie Le Van‐Jodin, Emiliano Pallecchi, Etienne Carré, Bruno Dlubak, Pierre Trousset, H. Happy, Y. Bousbaa, J. Fadel
article en

Abstract

In the framework of the ADICT project, the partner IEMN-CARBON aims to produce components based on 2D materials [1-3], for targeted PEPR projects. The aim is to extract their electrical properties and propose applications for high-frequency analogue electronics.The first components to be explored are RF switches based on 2D materials.Our work has led us to develop technological processes that are compatible with those of our partners (CEA Leti). The material used is MoS2 by ALD (Atomic Layer Deposition) growth, requiring a wet or dry transfer step. The growth and the fabrication process are managed on a 200 mm silicon substrate.This approach will be compatible with materials obtained by MBE (Molecular Beam Epitaxy) growth.A second approach has been developed with our partners at LAF, where 2D materials (WS2) are obtained by PLD (Pulse Laser Deposition) growth, requiring no transfer step, given the lower thermal budget.The performance of the devices obtained is in line with the simulations carried out at IEMN. The performances obtained are already state-of-the-art for this type of component.

SPIRE - Sciences Po Institutional REpository
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Université de Lille (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Laboratoire Albert Fert (FR), Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR), Spintronique et Technologie des Composants (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Polytechnique Hauts-de-France (FR), École Centrale de Lille (FR)
Openalex Percentile: Top 66%
2D Materials and Applications
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