X-Ray Fault Injection Localization with a Shield on Powered and Unpowered Devices

This study explores the use of X-ray fault injection localization techniques to evaluate the security of integrated circuits, particularly Flash memory in microcontrollers. Utilising a tungsten shield with an injection aperture, the experiments demonstrated precise targeting of the fault injection. The method was applied to both powered and unpowered devices, successfully discharging floating gate transistors in Flash memory, resulting in localised faults. The findings emphasise the effectiveness of the shield in localization X-ray exposure and highlight the vulnerabilities of critical integrated circuits to such attacks. The results obtained demonstrate the feasibility of injecting single bit faults into the Flash memory with X-ray of both powered and unpowered chips. This research contributes to the advancement of our understanding of X-ray fault injection mechanisms and underscores the importance of implementing robust security measures to counteract the emergence of novel threats.

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Publication Details

Published
2025-10-14
DOI
https://doi.org/10.1109/paine66113.2025.11320163
Primary Topic
Radiation Effects in Electronics
Type
article
Field-Weighted Citation Impact
0.00

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article

X-Ray Fault Injection Localization with a Shield on Powered and Unpowered Devices

S. Anceau, Paul Grandamme, Lilian Bossuet, Jean-Max Dutertre et al.
Radiation Effects in Electronics
article

X-Ray Fault Injection Localization with a Shield on Powered and Unpowered Devices

S. Anceau, Paul Grandamme, Lilian Bossuet, Jean-Max Dutertre, Nathalie Bochard, L. Salvò
article en

Abstract

This study explores the use of X-ray fault injection localization techniques to evaluate the security of integrated circuits, particularly Flash memory in microcontrollers. Utilising a tungsten shield with an injection aperture, the experiments demonstrated precise targeting of the fault injection. The method was applied to both powered and unpowered devices, successfully discharging floating gate transistors in Flash memory, resulting in localised faults. The findings emphasise the effectiveness of the shield in localization X-ray exposure and highlight the vulnerabilities of critical integrated circuits to such attacks. The results obtained demonstrate the feasibility of injecting single bit faults into the Flash memory with X-ray of both powered and unpowered chips. This research contributes to the advancement of our understanding of X-ray fault injection mechanisms and underscores the importance of implementing robust security measures to counteract the emergence of novel threats.

Institut polytechnique de Grenoble (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Mines Saint-Étienne (FR), CEA Grenoble (FR), Laboratoire Hubert Curien (FR), Science et Ingénierie des Matériaux et Procédés (FR), Institut de Microélectronique, Electromagnétisme et Photonique (FR), Laboratoire d'Électronique des Technologies de l'Information (FR)
Agence Nationale de la Recherche
Openalex Percentile: Top 59%
Radiation Effects in Electronics
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