X-Ray Fault Injection Localization with a Shield on Powered and Unpowered Devices
This study explores the use of X-ray fault injection localization techniques to evaluate the security of integrated circuits, particularly Flash memory in microcontrollers. Utilising a tungsten shield with an injection aperture, the experiments demonstrated precise targeting of the fault injection. The method was applied to both powered and unpowered devices, successfully discharging floating gate transistors in Flash memory, resulting in localised faults. The findings emphasise the effectiveness of the shield in localization X-ray exposure and highlight the vulnerabilities of critical integrated circuits to such attacks. The results obtained demonstrate the feasibility of injecting single bit faults into the Flash memory with X-ray of both powered and unpowered chips. This research contributes to the advancement of our understanding of X-ray fault injection mechanisms and underscores the importance of implementing robust security measures to counteract the emergence of novel threats.
Authors
- S. Anceau
- Paul Grandamme
- Lilian Bossuet (ORCID: https://orcid.org/0000-0001-7964-3137)
- Jean-Max Dutertre (ORCID: https://orcid.org/0000-0002-2251-7815)
- Nathalie Bochard
- L. Salvò
Institutions
- Institut polytechnique de Grenoble (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Mines Saint-Étienne (FR)
- CEA Grenoble (FR)
- Laboratoire Hubert Curien (FR)
- Science et Ingénierie des Matériaux et Procédés (FR)
- Institut de Microélectronique, Electromagnétisme et Photonique (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
Publication Details
- Published
- 2025-10-14
- DOI
- https://doi.org/10.1109/paine66113.2025.11320163
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agence Nationale de la Recherche