Numerical simulation of the current-voltage-temperature data in the inhomogeneous metal-semiconductor contacts

Numerical simulation of temperature and voltage-dependent current data of an inhomogeneous n-type Si Schottky barrier diode (SBD) was carried out using Tung’s equation [Phys. Rev. B 45, 13509 (1992)]. An optimization factor was added to Tung’s equation to decrease the contribution of TE current to the current through the SBD. Thus, the dominance of the patch current component was achieved at the expected temperature. It has been concluded that the I-V curves obtained with this additional factor can be overlapped with those obtained even at low temperatures.