Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes

This article investigates the Franz–Keldysh effect and the tunneling processes observed in tunnel diodes. The relationship between the optical absorption coefficient and the tunneling probability is analyzed using both theoretical and graphical methods. The dependence of both processes on energy is illustrated through 3D graphs. The surfaces defined according to the energy level distribution may contribute to improving the efficiency of optoelectronic devices based on tunnel diodes.

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Publication Details

Journal
Results in Optics
Published
2025-12-14
DOI
https://doi.org/10.1016/j.rio.2025.100950
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
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article

Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes

M. Uktamova, Sh. Mamadaliev
Results in Optics
Advancements in Semiconductor Devices and Circuit Design
article

Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes

M. Uktamova, Sh. Mamadaliev
article en

Abstract

This article investigates the Franz–Keldysh effect and the tunneling processes observed in tunnel diodes. The relationship between the optical absorption coefficient and the tunneling probability is analyzed using both theoretical and graphical methods. The dependence of both processes on energy is illustrated through 3D graphs. The surfaces defined according to the energy level distribution may contribute to improving the efficiency of optoelectronic devices based on tunnel diodes.

Results in OpticsVol. 22
Namangan State University (UZ)
Openalex Percentile: Top 59%
Advancements in Semiconductor Devices and Circuit Design
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