Cu Filling into Seed and Seedless Layered Through-Silicon-Via and Hybrid Bonding for High-Density Semiconductor Packaging

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Publication Details

Journal
Korean Journal of Materials Research
Published
2025-11-27
DOI
https://doi.org/10.3740/mrsk.2025.35.11.511
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Cu Filling into Seed and Seedless Layered Through-Silicon-Via and Hybrid Bonding for High-Density Semiconductor Packaging

Jae Pil Jung, Chae Yeon Lim, Hyun‐Sik Kim, Shin Hui Seon
Korean Journal of Materials Research
3D IC and TSV technologies
article

Cu Filling into Seed and Seedless Layered Through-Silicon-Via and Hybrid Bonding for High-Density Semiconductor Packaging

Jae Pil Jung, Chae Yeon Lim, Hyun‐Sik Kim, Shin Hui Seon
article en

Abstract

No abstract available for this paper.
Korean Journal of Materials ResearchVol. 35(11)
University of Seoul (KR)
Ministry of Trade, Industry and Energy, Korea Evaluation Institute of Industrial Technology
Openalex Percentile: Top 59%
3D IC and TSV technologies
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Cu Filling into Seed and Seedless Layered Through-Silicon-Via and Hybrid Bonding for High-Density Semiconductor Packaging — Jae Pil Jung, Chae Yeon Lim, et al. · Korean Journal of Materials Research (2025) | TGRS Research Map | TGRS