Influence of FeSiB Layer Thickness on Magnetoelectric Response of Asymmetric and Symmetric Structures of Magnetostrictive/Piezoelectric Composites

Asymmetric and symmetric magnetoelectric (ME)-laminated composites with magnetostrictive layer FeNi and piezoelectric layer PZT are prepared. The longitudinal resonance ME voltage coefficient in the symmetric composite is approximately 1.57 times that in the asymmetric composite with same constituents due to the flexural deformation and asymmetric stress distribution in the asymmetric structure. By bonding an additional high-permeability FeSiB, combining FeSiB with FeNi forms magnetization-graded ferromagnetic materials. A stronger maximum ME voltage coefficient, a dual-peak phenomenon, and a self-bias ME effect are observed. The maximum ME voltage coefficients for asymmetric and symmetric composites reach 3.10 V/Oe and 5.67 V/Oe by adjusting the thickness of the FeCuNbSiB layer. The maximum zero-bias ME voltage coefficients for asymmetrical and symmetrical composite materials reach 2.19 V/Oe at 25 µm thickness of FeSiB and 2.87 V/Oe at 75 µm thickness of FeSiB. Such high performances enable the ME composites to possess ideal sensing and make them promising for self-bias current sensor applications.