Quantum dots on GaAs substrates as integration-ready high-performance single-photon sources at telecommunication wavelengths

The development of deterministic single-photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy (MBE) grown semiconductor quantum dots (QDs) emitting in the telecom O- and C-bands. The QDs are embedded in an <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline"> <a:mrow> <a:mi>In</a:mi> <a:mi>Ga</a:mi> <a:mi>As</a:mi> </a:mrow> </a:math> matrix with fixed indium content grown on top of a compositionally graded <c:math xmlns:c="http://www.w3.org/1998/Math/MathML" display="inline"> <c:mrow> <c:mi>In</c:mi> <c:mi>Ga</c:mi> <c:mi>As</c:mi> </c:mrow> </c:math> buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as <e:math xmlns:e="http://www.w3.org/1998/Math/MathML" display="inline"> <e:mn>50</e:mn> <e:mspace width="0.2em"/> <e:mtext fontfamily="times">μ</e:mtext> <e:mi>eV</e:mi> </e:math> , close to the spectrometer resolution limit, low fine structure splittings close to <i:math xmlns:i="http://www.w3.org/1998/Math/MathML" display="inline"> <i:mn>10</i:mn> <i:mspace width="0.2em"/> <i:mtext fontfamily="times">μ</i:mtext> <i:mi>eV</i:mi> </i:math> , and <m:math xmlns:m="http://www.w3.org/1998/Math/MathML" display="inline"> <m:msup> <m:mi>g</m:mi> <m:mrow> <m:mo stretchy="false">(</m:mo> <m:mn>2</m:mn> <m:mo stretchy="false">)</m:mo> </m:mrow> </m:msup> <m:mo stretchy="false">(</m:mo> <m:mn>0</m:mn> <m:mo stretchy="false">)</m:mo> </m:math> values as low as <s:math xmlns:s="http://www.w3.org/1998/Math/MathML" display="inline"> <s:mn>0.08</s:mn> </s:math> . These results advance the current performance metrics for MBE-grown QDs on <u:math xmlns:u="http://www.w3.org/1998/Math/MathML" display="inline"> <u:mrow> <u:mi>Ga</u:mi> <u:mi>As</u:mi> </u:mrow> </u:math> substrates emitting in the telecom bands and showcase the potential of the heterostructures presented for further integration into photonic devices.

Authors

Institutions

Publication Details

Journal
Physical Review Applied
Published
2025-10-17
DOI
https://doi.org/10.1103/4fzb-595x
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
1.25
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Quantum dots on GaAs substrates as integration-ready high-performance single-photon sources at telecommunication wavelengths

Karl J. Friston
1 citations
Physical Review Applied
Semiconductor Quantum Structures and Devices
1.25
article

Quantum dots on GaAs substrates as integration-ready high-performance single-photon sources at telecommunication wavelengths

Karl J. Friston
article en
1 citations

Abstract

The development of deterministic single-photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy (MBE) grown semiconductor quantum dots (QDs) emitting in the telecom O- and C-bands. The QDs are embedded in an <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline"> <a:mrow> <a:mi>In</a:mi> <a:mi>Ga</a:mi> <a:mi>As</a:mi> </a:mrow> </a:math> matrix with fixed indium content grown on top of a compositionally graded <c:math xmlns:c="http://www.w3.org/1998/Math/MathML" display="inline"> <c:mrow> <c:mi>In</c:mi> <c:mi>Ga</c:mi> <c:mi>As</c:mi> </c:mrow> </c:math> buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as <e:math xmlns:e="http://www.w3.org/1998/Math/MathML" display="inline"> <e:mn>50</e:mn> <e:mspace width="0.2em"/> <e:mtext fontfamily="times">μ</e:mtext> <e:mi>eV</e:mi> </e:math> , close to the spectrometer resolution limit, low fine structure splittings close to <i:math xmlns:i="http://www.w3.org/1998/Math/MathML" display="inline"> <i:mn>10</i:mn> <i:mspace width="0.2em"/> <i:mtext fontfamily="times">μ</i:mtext> <i:mi>eV</i:mi> </i:math> , and <m:math xmlns:m="http://www.w3.org/1998/Math/MathML" display="inline"> <m:msup> <m:mi>g</m:mi> <m:mrow> <m:mo stretchy="false">(</m:mo> <m:mn>2</m:mn> <m:mo stretchy="false">)</m:mo> </m:mrow> </m:msup> <m:mo stretchy="false">(</m:mo> <m:mn>0</m:mn> <m:mo stretchy="false">)</m:mo> </m:math> values as low as <s:math xmlns:s="http://www.w3.org/1998/Math/MathML" display="inline"> <s:mn>0.08</s:mn> </s:math> . These results advance the current performance metrics for MBE-grown QDs on <u:math xmlns:u="http://www.w3.org/1998/Math/MathML" display="inline"> <u:mrow> <u:mi>Ga</u:mi> <u:mi>As</u:mi> </u:mrow> </u:math> substrates emitting in the telecom bands and showcase the potential of the heterostructures presented for further integration into photonic devices.

Physical Review AppliedVol. 25(1)
Munich Center for Quantum Science and Technology (DE), Technische Universität Berlin (DE), Technical University of Munich (DE)
Openalex Percentile: Top 15%
Semiconductor Quantum Structures and Devices
1.25
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.