Electronic structure of the A15 superconductors <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi mathvariant="normal">Nb</mml:mi> <mml:mn>3</mml:mn> </mml:msub> <mml:mi mathvariant="normal">Sb</mml:mi> </mml:math> and <mml

Superconductors with A15 structure have been studied for decades, with recent research focusing on their potential topological band structures and spin Hall effects. However, direct electronic structure studies are still lacking. Here, we have investigated the electronic structure of ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ and ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$ using angle-resolved photoemission spectroscopy. The band structure reveals pronounced three-dimensional features, which are overall consistent with the results of our density-functional theory calculations. Notably, a band renormalization factor of 1.44 is required for ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$, whereas no such renormalization is needed for ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$, indicating stronger correlation effect in ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$. Flat bands are present in both samples, located at \ensuremath{-}0.28 eV below the Fermi level in ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ and nearly touching Fermi level in ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$, thereby enhancing the density of states near Fermi level and thus responsible for the higher superconducting critical temperature of ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$. Both ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ and ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$ feature four- and eightfold degenerate fermions at the $R$ point. Moreover, ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ is also characterized by a topological invariant of ${Z}_{2}$ = 1, confirming it as a strong topological material, which might be responsible for its nonsaturating magnetoresistance. Our results give fundamental understanding of the electronic structure and band topology of the A15 superconductors, fill the long-standing gap of the experimental electronic structure study of these materials.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-11-21
DOI
https://doi.org/10.1103/k3rt-q85v
Citations
1
Primary Topic
Superconductivity in MgB2 and Alloys
Type
article
Field-Weighted Citation Impact
1.26
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article

Electronic structure of the A15 superconductors <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi mathvariant="normal">Nb</mml:mi> <mml:mn>3</mml:mn> </mml:msub> <mml:mi mathvariant="normal">Sb</mml:mi> </mml:math> and <mml

Karl J. Friston
1 citations
Physical review. B./Physical review. B
Superconductivity in MgB2 and Alloys
1.26
article

Electronic structure of the A15 superconductors <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi mathvariant="normal">Nb</mml:mi> <mml:mn>3</mml:mn> </mml:msub> <mml:mi mathvariant="normal">Sb</mml:mi> </mml:math> and <mml

Karl J. Friston
article en
1 citations

Abstract

Superconductors with A15 structure have been studied for decades, with recent research focusing on their potential topological band structures and spin Hall effects. However, direct electronic structure studies are still lacking. Here, we have investigated the electronic structure of ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ and ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$ using angle-resolved photoemission spectroscopy. The band structure reveals pronounced three-dimensional features, which are overall consistent with the results of our density-functional theory calculations. Notably, a band renormalization factor of 1.44 is required for ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$, whereas no such renormalization is needed for ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$, indicating stronger correlation effect in ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$. Flat bands are present in both samples, located at \ensuremath{-}0.28 eV below the Fermi level in ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ and nearly touching Fermi level in ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$, thereby enhancing the density of states near Fermi level and thus responsible for the higher superconducting critical temperature of ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$. Both ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ and ${\mathrm{V}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Si}$ feature four- and eightfold degenerate fermions at the $R$ point. Moreover, ${\mathrm{Nb}}_{3}\phantom{\rule{0.16em}{0ex}}\mathrm{Sb}$ is also characterized by a topological invariant of ${Z}_{2}$ = 1, confirming it as a strong topological material, which might be responsible for its nonsaturating magnetoresistance. Our results give fundamental understanding of the electronic structure and band topology of the A15 superconductors, fill the long-standing gap of the experimental electronic structure study of these materials.

Physical review. B./Physical review. BVol. 112(23)
University of Science and Technology of China (CN), State Key Laboratory of Functional Materials for Informatics, Shanghai Synchrotron Radiation Facility, Zhejiang University (CN)
Openalex Percentile: Top 15%
Superconductivity in MgB2 and Alloys
1.26
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