Mechanochemically Synthesized Nanocrystalline Cu2ZnSnSe4 as a Multifunctional Material for Energy Conversion and Storage Applications
Cu<sub>2</sub>ZnSnSe<sub>4</sub> is a promising light-absorbing material for cost-effective and eco-friendly thin-film solar cells; however, its synthesis often leads to secondary phases that limit device efficiency. To overcome these challenges, we devised a straightforward and efficient method to obtain single-phase Cu<sub>2</sub>ZnSnSe<sub>4</sub> nanocrystalline powders directly from the elements Cu, Zn, Sn, and Se via mechanochemical synthesis followed by vacuum annealing at 450 °C. Phase evolution monitored by X-ray diffraction (XRD) and Raman spectroscopy at two-hour milling intervals confirmed the formation of phase-pure kesterite Cu<sub>2</sub>ZnSnSe<sub>4</sub> and enabled tracking of transient secondary phases. Raman spectra revealed the characteristic A<sub>1</sub> vibrational modes of the kesterite structure, while XRD peaks and Rietveld refinement (χ<sup>2</sup> ~ 1) validated single-phase formation with crystallite sizes of 10-15 nm and dislocation densities of 3.00-3.20 10<sup>15</sup> lines/m<sup>2</sup>. Optical analysis showed a direct bandgap of ~1.1 eV, and estimated linear and nonlinear optical constants validate its potential for photovoltaic applications. Scanning electron microscopy (SEM) analysis showed uniformly distributed particles 50-60 nm, and energy dispersive X-ray (EDS) analysis confirmed a near-stoichiometric Cu:Zn:Sn:Se ratio of 2:1:1:4. X-ray photoelectron spectroscopy (XPS) identified the expected oxidation states (Cu<sup>+</sup>, Zn<sup>2+</sup>, Sn<sup>4+</sup>, and Se<sup>2-</sup>). Electrical characterization revealed p-type conductivity with a mobility (μ) of 2.09 cm<sup>2</sup>/Vs, sheet resistance (ρ) of 4.87 Ω cm, and carrier concentrations of 1.23 × 10<sup>19</sup> cm<sup>-3</sup>. Galvanostatic charge-discharge testing (GCD) demonstrated an energy density of 2.872 Wh/kg<sup>-1</sup> and a power density of 1083 W kg<sup>-1</sup>, highlighting the material's additional potential for energy storage applications.
Authors
- A.M. Kamalan Kirubaharan (ORCID: https://orcid.org/0000-0002-6514-9063)
- T.S. Shyju (ORCID: https://orcid.org/0000-0002-1814-0058)
- Vengatesh Panneerselvam (ORCID: https://orcid.org/0000-0002-1946-162X)
- S. Anandhi (ORCID: https://orcid.org/0000-0001-9158-0124)
- Devika Rajan Sajitha (ORCID: https://orcid.org/0000-0001-5538-2315)
- Beauno Stephen
- Angel Agnes Johnrose
Institutions
- Manonmaniam Sundaranar University (IN)
- Trencianska Univerzita Alexandra Dubceka V Trencine (SK)
- Sathyabama Institute of Science and Technology (IN)
Publication Details
- Journal
- Nanomaterials
- Published
- 2025-12-12
- DOI
- https://doi.org/10.3390/nano15241866
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73